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Electronic devices and applications

Crystal structure of semiconductors (electrons, holes, impurities, Fermi level, diffusion, continuity equation), semiconductor diodes (P-N junction, V-I characteristics, forward and reverse bias), diode circuit applications (rectifier and clipping circuits) BJT, MOS, JFET transistors, V-I characteristics, physical construction, signal amplifiers, bias circuits, transistor circuit model, AC and DC analysis.
 

Course ID
MENG 321
Level
Undergraduate
Credit Hours
CH:2